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Electronic Materials (EM)5.0 ECTS (englische Bezeichnung: Electronic Materials)
Modulverantwortliche/r: Christoph J. Brabec, Gebhard Matt Lehrende:
Christoph J. Brabec
Startsemester: |
WS 2019/2020 | Dauer: |
1 Semester | Turnus: |
jährlich (WS) |
Präsenzzeit: |
45 Std. | Eigenstudium: |
105 Std. | Sprache: |
Englisch |
Lehrveranstaltungen:
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Electronic Materials
(Vorlesung, 3 SWS, Christoph J. Brabec et al., Mi, 16:30 - 18:00, 3.71; final time and dates for seminar to be determined with Prof. Brabec; Vorbesprechung: 16.10.2019, 16:30 - 17:30 Uhr, 3.71)
Inhalt:
- semiconductor materials, elementary, binary, ternary and quaternary semiconductors, crystal structures
formation of band structures, direct and indirect semiconductors, bandgap, effective mass of carriers
carrier statistics, Ohm’s low, Fermi-distribution, density of states, carrier densities
intrinsic and extrinsic (doped) semiconductors, mechanisms of doping and limitations, carrier concentration and position of Fermi energy versus temperature, temperature dependence of carrier density and conductivity, degenerate semiconductors
epitaxy of semiconductors, quantum wells and quantum dots, characterization of epitaxial layers
patterning of semiconductors, lithography, etching and material deposition
carrier transport, Drude model, scattering processes, thermal and drift velocity, mobility, conductivity
principles, processing and application of ohmic contacts (Peltier), Shottky contacts
diffusion, band structure in electric field
pn-junction, doping concentration, carrier densities, depletion region, electric field and potential
biased pn-junction, carrier transport and current-voltage characteristic
photovoltaics, kinds of solar cells, their limits and materials demands
organic semiconductors and their applications
Lernziele und Kompetenzen:
The lecture enables the students to understand the basic physical properties of semiconductors. The fundamentals of semiconductor devices are introduced based on a discussion of the pn-junction diode.
The lecture also covers technological aspects such as growth and processing of semiconductors.
The seminar enables the student to amplify their knowledge about the topics of the lectures, especially on materials demands for electronic devices, first of all for solar cells. Every student should prepare at least one talk to the selected topic.
Literatur:
- Simon M. Sze, “Semiconductor Devices: Physics and Technology", John Wiley & Sons
S.O. Kasap, Principles of Electronic Materials and Devices (Mc Graw Hill, 3rd Edition)
W. Callister, Materials Science and Engineering (esp. chapter 12, Wiley, 2nd Edition)
Bemerkung:
Lecture and seminar
Organisatorisches:
https://www.studon.fau.de/crs2002433.html
Weitere Informationen:
Schlüsselwörter: Elitestudiengang MAP
www: https://www.map.tf.fau.de/
Studien-/Prüfungsleistungen:
Electronic Materials (Prüfungsnummer: 1739)
- Studienleistung, Klausur, Dauer (in Minuten): 90, unbenotet, 5.0 ECTS
- Prüfungssprache: Englisch
- Erstablegung: WS 2019/2020, 1. Wdh.: SS 2020
1. Prüfer: | Christoph J. Brabec |
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UnivIS ist ein Produkt der Config eG, Buckenhof |
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