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Vorlesungsverzeichnis >> Technische Fakultät (TF) >>
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Crystal Growth 1 - Fundamentals of Crystal Growth and Semiconductor Technology (CG-1)- Dozent/in
- Prof. Dr.-Ing. Peter Wellmann
- Angaben
- Vorlesung
Online/Präsenz
2 SWS, ECTS-Studium, ECTS-Credits: 3
nur Fachstudium, Sprache Englisch, Zoom: https://fau.zoom.us/j/94576058631?pwd=QVBOK0N4cVp3cmM1WHdsdUlkUGY3dz09
Asynchrone Lehrveranstaltung, http://www.studon.uni-erlangen.de/studon/goto.php?target=crs_359146
Zeit und Ort: jede 3. Woche Mo 10:15 - 11:45, 0.68; Bemerkung zu Zeit und Ort: Termine: 19.Okt / 8.Nov / 29.Nov / 20.Dez / 10.Jan / 31.Jan.: erster Termin Di. 19.10.21 als ZOOM-meeting https://fau.zoom.us/j/94576058631?pwd=QVBOK0N4cVp3cmM1WHdsdUlkUGY3dz09
Vorbesprechung: 19.10.2021, 10:15 - 11:00 Uhr, Raum Zoom-Meeting
- Studienfächer / Studienrichtungen
- WPF MWT-MA-WET ab 1 (ECTS-Credits: 3)
WPF ET-MA-MWT ab 1 (ECTS-Credits: 3)
WPF NT-MA ab 1 (ECTS-Credits: 3)
- Voraussetzungen / Organisatorisches
- Prüfung: eKlausur, unbenoteter Leistungsnachweis (Bestehen mit mindestens 70% der maximalen Punktzahl)
- Inhalt
- Fundamentals of crystal growth with focus on melt growth, introduction to the processing of Si-based semiconductor devices using planar technology:
I.1 Fundamentals of Crystal Growth
· Introduction
· Driving force for crystallization
· Heat and mass transport
· Melt convection (forced convection, magnetic fields)
· Meniscus formation
· Shape of growth interface
· Growth kinetics (Kossel model, Jackson Factor, etc.)
I.2 Melt Growth (Si, III-V, Oxides)
· Review – preparation of semiconductor grade Si source material
· Si Czochralski & floating zone processes
· Point defects & oxygen in bulk silicon
· Overview on further Si processing (bulk and thin films)
· Czochralski & Vertical Gradient Freeze growth process of III-V
compounds
· Semiconductor substrates (semi-insulating materials)
· Solar Silicon growth techniques (casting, “shaped crystal growth, …)
II. Semiconductor Technology – focus on silicon
II.1 Fundamentals of Planar Technology
II.2 Oxidation Process
II.3 Lithography
II.4 Etching
II.5 Doping by Diffusion & Ion Implantation
II.6 Metallization and Vacuum Deposition Techniques
II.7 Packaging
- Empfohlene Literatur
- S.M. Sze; Semiconductor Devices – Physics and Technology (14 x T80/8S58(2))
P.J. Wellmann; Materialien der Elektronik und Energietechnik : Halbleiter, Graphen, funktionale Materialien; Springer Vieweg (2019), 2nd edition, ISBN 978-3-658-26991-3
- ECTS-Informationen:
- Title:
- Crystal Growth 1 - Fundamentals of Crystal Growth and Semiconductor Technology
- Credits: 3
- Prerequisites
- Electronic exam, passing with at least 70%
- Contents
- Fundamentals of crystal growth with focus on melt growth, introduction to the processing of Si-based semiconductor devices using planar technology:
I.1 Fundamentals of Crystal Growth
· Introduction
· Driving force for crystallization
· Heat and mass transport
· Melt convection (forced convection, magnetic fields)
· Meniscus formation
· Shape of growth interface
· Growth kinetics (Kossel model, Jackson Factor, etc.)
I.2 Melt Growth (Si, III-V, Oxides)
· Review – preparation of semiconductor grade Si source material
· Si Czochralski & floating zone processes
· Point defects & oxygen in bulk silicon
· Overview on further Si processing (bulk and thin films)
· Czochralski & Vertical Gradient Freeze growth process of III-V compounds
· Semiconductor substrates (semi-insulating materials)
· Solar Silicon growth techniques (casting, “shaped crystal growth, …)
II. Semiconductor Technology – focus on silicon
II.1 Fundamentals of Planar Technology
II.2 Oxidation Process
II.3 Lithography
II.4 Etching
II.5 Doping by Diffusion & Ion Implantation
II.6 Metallization and Vacuum Deposition Techniques
II.7 Packaging
- Literature
- S.M. Sze; Semiconductor Devices – Physics and Technology (14 x T80/8S58(2))
P.J. Wellmann; Materialien der Elektronik und Energietechnik : Halbleiter, Graphen, funktionale Materialien; Springer Vieweg (2019), 2nd edition, ISBN 978-3-658-26991-3
- Zusätzliche Informationen
- Schlagwörter: crystal growth, processing, Silicon, semiconductor technology
Erwartete Teilnehmerzahl: 15, Maximale Teilnehmerzahl: 25
www: https://www.studon.fau.de/studon/goto.php?target=crs_3259598
- Verwendung in folgenden UnivIS-Modulen
- Startsemester WS 2021/2022:
- Crystal Growth 1 (cgl-1)
- Crystal Growth ET (MWT 3) (CGET)
- Semiconductor Fundamentals, Characterization, Materials & Processing (SF- Ch- M&P)
- Institution: Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)
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