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Nanotechnologie (Master of Science) >>
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Crystal Growth 2 - Electronic Devices & Materials Properties/Processing, Epitaxial Growth (CG-2)- Person in charge
- Prof. Dr.-Ing. Peter Wellmann
- Details
- Vorlesung
Präsenz
2 cred.h, certificate, ECTS studies, ECTS credits: 3
nur Fachstudium, Sprache Deutsch oder Englisch, Exam: oral
Asynchrone Lehrveranstaltung, https://www.studon.fau.de/studon/goto.php?target=crs_359146
- Fields of study
- WPF WW-DH-WET 8 (ECTS-Credits: 3)
PF MWT-MA-WET 2 (ECTS-Credits: 3)
WPF ET-MA-MWT 2 (ECTS-Credits: 3)
WPF NT-MA 2 (ECTS-Credits: 3)
- Prerequisites / Organisational information
- Prüfung: eKlausur, unbenoteter Leistungsnachweis (Bestehen mit mindestens 70% der maximalen Punktzahl)
- Contents
- III. Electronic Devices & Materials Propertied / Processing
III.1 Semiconductor Device Building Blocks
III.2 Bipolar Diode
III.3 Bipolar Transistor
III.4 Schottky Diode
III.5 Field Effect Transistor
III.6 Interfaces
III.7 Optoelectronic Devices
III.8 Solar Cells - overview
- Recommended literature
- S.M. Sze; Semiconductor Devices – Physics and Technology (14 x T80/8S58(2))
P.J. Wellmann; Materialien der Elektronik und Energietechnik : Halbleiter, Graphen, funktionale Materialien; Springer Vieweg (2019), 2nd edition, ISBN 978-3-658-26991-3
- ECTS information:
- Credits: 3
- Additional information
- Expected participants: 20, Maximale Teilnehmerzahl: 20
www: https://www.studon.fau.de/studon/goto.php?target=crs_359146
- Verwendung in folgenden UnivIS-Modulen
- Startsemester WS 2021/2022:
- Crystal Growth ET (MWT 3) (CGET)
- Startsemester SS 2022:
- Crystal Growth 2 (cgl-2)
- Department: Chair of Materials for Electronics and Energy Technology
Courses
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