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Chemie (Master of Science) >>

  Halbleiter großer Bandlücke

Lecturer
Prof. Dr.-Ing. Peter Wellmann

Details
Vorlesung
1 cred.h, ECTS studies, ECTS credits: 1,5, Sprache Deutsch
Time and place: Mon 12:15 - 13:45, 3.71; comments on time and place: 6 Termine im SS2019, Beginn: 3. Juni 2019

Fields of study
WPF MWT-MA-WET 2 (ECTS-Credits: 1,5)
WPF ET-MA-MWT 2 (ECTS-Credits: 1,5)
WPF NT-MA 2 (ECTS-Credits: 1,5)

Contents
The lecture will give an introduction to the most common wide bandgap semicondutor materials. Physical properties, applications, growth & epitaxy as well as some specialties will be discussed. In terms of materials the most common wide bandgap semicondutors like silicon carbid (SiC9, nitrides GaN and related alloys), II-VI semicondutors (ZnSe and related as well as ZnO) and diamond (C) will be considered.

ECTS information:
Credits: 1,5

Additional information
Expected participants: 10

Verwendung in folgenden UnivIS-Modulen
Startsemester WS 2018/2019:
Crystal Growth ET (MWT 3) (CGET)
Crystal Growth MWT (M2 - M3) (CGMWT)
Halbleitertechnologie (CE5)
Kristallzüchtung und Halbleitertechnologie (CG-NT)
Materialien der Elektronik und Energietechnik mit Vertiefung Crystal Growth (M1_CG_WW6)

Department: Chair of Materials for Electronics and Energy Technology
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