Crystal Growth and Material Processing - Experimental and Numerical Approaches (GRK 2495 Lecture)5 ECTS
(englische Bezeichnung: Crystal Growth and Material Processing - Experimental and Numerical Approaches)

Lehrveranstaltungen:

• • Introduction to the phase-field method for crystal growth, processing and multiferroics
    (Vorlesung, Anwesenheitspflicht, Frank Wendler, Blockveranstaltung 30.5.2022-2.6.2022 Mo-Do, 13:00 - 16:15, Raum n.V.; vom 30.5.2022 bis zum 3.6.2022)
  • Crystal growth of semiconductor and material processing using ultrashort laser pulses
    (Vorlesung, Anwesenheitspflicht, Reina Miyagawa, Blockveranstaltung 30.5.2022-2.6.2022 Mo-Do, 8:00 - 12:00; This lecture will be held online.)

Inhalt:

• Introduction to the phase-field method for crystal growth, processing and multiferroics Syllabus: This lecture introduces the key ingredients to understand and implement the phase-field method (PFM), which has established as an important simulation tool to understand mesoscopic structure evolution in alloys, ceramics and soft matter. In the course the focus lies on applications in crystal growth, solidification and thin film growth of multi-component systems (alloys and minerals), but we will also touch domain or variant evolution in multiferroic systems, such as ferroelectrics, shape memory alloys (SMAs) and ferromagnetic SMAs. The basic idea of introducing diffuse interfaces that simplify the numerical treatment of this kind of free boundary value problems is explained, and the mathematical and physical background including thermodynamics is developed. A lecture of its own will be dedicated to implementation of this method, including feasible and flexible software packages that can be used without long-standing experience in numerics. From elementary description of interfacial phenomena to the kinetics of crystalline interfaces, increasingly complex models including single phase-field to multiple phase-field methods are exploited. Important transport processes containing diffusion, fluid flow and mechanical deformation are coupled. The goal is to convey a tool to study intricate pattern formation during solidification (dendrites), eutectic lamellae growth, precipitate growth and solutal crystal growth. Additional chapters on the relationship of PFM to atomistic simulation techniques (MD, DFT) will be presented, allowing for a length scales bridging in computational modeling.
• Crystal growth of semiconductor and material processing using ultrashort laser pulses Syllabus: This course provides basic and latest knowledge on the crystal growth of semiconductor materials, especially about epitaxial growth. This course also provides the latest fine processing technique using ultrashort pulse lasers.

Bemerkung:

All modules from this series may be participated by master students from the courses: CE, EEI, ET, MB, ME, MWT, NT, WING and MAP.

Organisatorisches:

This module is coordinated by GRK 2495 - Coordinator Julia Berger (julia.b.berger@fau.de)

Weitere Informationen: