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Crystal Growth - Lab Work 2 Wafer Characterization- Lecturer
- Prof. Dr.-Ing. Peter Wellmann
- Details
- Praktikum
Online/Präsenz
2 cred.h, benoteter certificate, compulsory attendance, ECTS studies, ECTS credits: 2
nur Fachstudium, Sprache Deutsch oder Englisch
Time and place: Thu 8:00 - 17:00, 3.71; comments on time and place: Do-Termine entsprechend der Gruppeneinteilung, ZOOM-VORBESPRECHUNG: https://fau.zoom.us/j/65411763300?pwd=SzUvQVZPVmNRM1plS3VDM2NBd1FqQT09
- Prerequisites / Organisational information
- Participants of the Teaching Module "Crystal Growth 2"
- Contents
- Characterization of SiC semiconductor wafers
- Recommended literature
- Wellmann, P., & Weingärtner, R. (2003). Determination of doping levels and their distribution in SiC by optical techniques. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 102(1-3), 262-268.
https://dx.doi.org/10.1016/S0921-5107(02)00707-9
- ECTS information:
- Credits: 2
- Additional information
- Verwendung in folgenden UnivIS-Modulen
- Startsemester SS 2022:
- Crystal Growth 2 (cgl-2)
- Department: Chair of Materials for Electronics and Energy Technology
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