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Crystal Growth 2 - Wide Bandgap Semiconductors- Person in charge
- N.N.
- Details
- Vorlesung
Präsenz
1 cred.h, benoteter certificate, ECTS studies, ECTS credits: 2
nur Fachstudium, Sprache Deutsch oder Englisch, Exam: written project work (with grading) of 5 pages in a Journal Style
Asynchrone Lehrveranstaltung, https://www.studon.fau.de/studon/goto.php?target=crs_359146
- Fields of study
- WPF MWT-MA-WET 2 (ECTS-Credits: 2)
WPF ET-MA-MWT 2 (ECTS-Credits: 2)
WPF NT-MA 2 (ECTS-Credits: 2)
- Prerequisites / Organisational information
- Exam: written project work (with grading) of 4 pages in a Journal Style
- Contents
- Overview on Wide Bandgap Semiconductors with special emphasis on the materials Diamond, SiC, GaN, AlN, ZnSe, ZnO and Ga2O3, doping, polytypism, solution growth, vapor growth
- ECTS information:
- Credits: 2
- Additional information
- Keywords: Wide Bandgap, Semiconductor, Diamond, SiC, GaN, AlN, ZnSe, ZnO, Ga2O3
Expected participants: 20, Maximale Teilnehmerzahl: 20
www: https://www.studon.fau.de/studon/goto.php?target=crs_4514743
- Verwendung in folgenden UnivIS-Modulen
- Startsemester WS 2021/2022:
- Crystal Growth ET (MWT 3) (CGET)
- Startsemester SS 2022:
- Crystal Growth 2 (cgl-2)
- Department: Chair of Materials for Electronics and Energy Technology
Courses
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